The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 1997
Filed:
Jul. 26, 1996
Applicant:
Inventor:
Jung-Hui Lin, Gilbert, AZ (US);
Assignee:
Motorola Inc., Schaumburg, IL (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
1566461 ; 1566621 ; 437981 ;
Abstract
A method for forming a tapered opening in a silicon substrate uses NF.sub.3 and HBr. The NF.sub.3 /HBr plasma etch allows both a good taper profile, 85.degree. to 60.degree., as well as a good etch rate, approximately 2500 to 3000 .ANG./minute. Although not limited to a particular trench size, the present method is well suited for forming openings smaller than 0.45 .mu.m.