The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 22, 1997

Filed:

Feb. 26, 1996
Applicant:
Inventors:

Moris Musa Dovek, San Carlos, CA (US);

Bruce Alvin Gurney, Santa Clara, CA (US);

Virgil Simon Speriosu, San Jose, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11B / ; G11B / ;
U.S. Cl.
CPC ...
360 75 ; 360113 ; 324252 ; 338 / ;
Abstract

Sensors based on the giant magnetoresistance effect, specifically 'spin valve' (SV) magnetoresistive sensors, have applications as external magnetic field sensors and as read heads in magnetic recording systems, such as rigid disk drives. These sensors have a ferromagnetic layer whose magnetization orientation is fixed or pinned by being exchange coupled to an antiferromagnetic layer. The magnetization of the pinned layer will become misaligned and the sensor will experience an abnormal response to the field being sensed, i.e., the external magnetic field or the recorded data in the magnetic media, if an adverse event elevates the antiferromagnetic layer above its blocking temperature. A pinned layer mangetization reset system is incorporated into systems that use SV sensors. The reset system generates an electrical current waveform that is directed through the SV sensor with an initial current value sufficient to heat the antiferromagnetic layer above its blocking temperature, and a subsequent lower current value to generate a magnetic field around the pinned layer sufficient to properly orient the magnetization of the pinned layer while the antiferromagnetic layer is cooling below its blocking temperature. This process resets the magnetization of the pinned layer to its preferred orientation and returns the SV sensor response substantially back to its desired state.


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