The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 1997
Filed:
Feb. 20, 1996
Applicant:
Inventor:
Sung-Hun Oh, Phoenix, AZ (US);
Assignee:
VLSI Technology, Inc., San Jose, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G06G / ; H03K / ;
U.S. Cl.
CPC ...
327362 ; 327404 ; 327437 ;
Abstract
The present invention relates to a system for neutralizing charge injection problems in a switched current system. The system is comprised of a PMOS transistor coupled in parallel with an NMOS switch transistor. If the channel area of the PMOS transistor and the NMOS transistor are equal, then the clock signal to the PMOS transistor must be adjusted to neutralize the negative channel charges of the NMOS transistor. However, if the clock signal to both the PMOS transistor and the NMOS transistor are equal, then the dimension of the PMOS transistor must be smaller than the NMOS transistor in order to neutralize the negative channel charges of the NMOS transistor.