The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 1997
Filed:
Feb. 29, 1996
Applicant:
Inventors:
Tsutomu Sone, Tokyo, JP;
Toshinori Nishii, Tokyo, JP;
Keizo Hagimoto, Tokyo, JP;
Yasuhiro Koseki, Yamagata, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257288 ; 257277 ; 257532 ;
Abstract
A semiconductor device having a field-effect transistor has a MOS capacitor formed on a principal surface of a semiconductor substrate of the semiconductor device, and connecting a first and a second electrodes of the MOS capacitor to a source electrode and a drain electrode, respectively, of the field-effect transistor.