The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 1997
Filed:
Sep. 09, 1994
Applicant:
Inventors:
Hiromasa Funakoshi, Hirakata, JP;
Takao Kuroda, Ibaraki, JP;
Assignee:
Matsushita Electric Industrial Co., Ltd., Kadoma, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257240 ; 257241 ; 257243 ; 257250 ;
Abstract
A charge transfer device has trapezoidal shape impurity-implanted regions (1, 51, . . . ) in n-type regions (271, 371) at least in the through-paths between a first HCCD (27) and a second HCCD (28), and its isolation regions (41) under the transfer gate (29) are trapezoidal shaped, and thereby charge transfer loss and hence FPN is minimized and the transfer efficiency is much improved.