The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 1997
Filed:
Nov. 21, 1995
Applicant:
Inventor:
Gouri Radhakrishnan, Culver City, CA (US);
Assignee:
The Aerospace Corporation, El Segundo, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437237 ; 437228 ; 437241 ; 427555 ; 20419225 ; 148D / ; 148D / ;
Abstract
Thin films of aluminum nitride are deposited at 350 K on silicon, GaAs, fused quartz, and KBr substrates using gas-phase 193 nm excimer laser photolysis of trimethylamine alane and ammonia precursors without a thermally induced or a spontaneous reaction between them, resulting in AlN thin films that are amorphous, smooth and featureless having a band gap of 5.8 eV, a refractive index of 2.0, a breakdown electric field breakdown of 10.sup.8 V/m, a low-frequency dielectric constant of 6.0-6.9, high-frequency dielectric constant of 3.9-4.0, well suited for many thin film applications.