The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 1997
Filed:
Oct. 17, 1995
Stacy Royce Kamasz, Waterloo, CA;
Michael George Farrier, Boyne City, MI (US);
Dalsa, Inc., , CA;
Abstract
A CCD shift register includes a second gate electrode disposed adjacent to and longitudinally spaced from a first gate electrode, and a buried layer having a first dopant impurity concentration. The first gate electrode is disposed over the buried layer to define a first buried layer area. The second gate electrode is disposed over the buried layer to define a second buried layer area greater than the first buried layer area. In the buried layer, a trench region is formed to have a second dopant impurity concentration greater than the first dopant impurity concentration. The first gate electrode is disposed over the trench region to define a first trench area. The second gate electrode being disposed over the trench region to define a second trench area less than the first trench area. The first and second trench areas are dimensioned so that a first charge storage capacity is equal to or greater than a second charge storage capacity. A tapped CCD shift register includes a first CCD shift register segment and a second shift register segment, both the first and second CCD shift register segments being characterized by a pitch length in the longitudinal direction. The first CCD shift register segment includes a sense node, and the second CCD shift register segment includes a beginning shift register charge storage element, both the sense node and the beginning shift register charge storage element being disposed within one pitch length in the longitudinal direction.