The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 1997
Filed:
Nov. 22, 1994
Charvaka Duvvury, Plano, TX (US);
Janet L Wise, Plano, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A method and apparatus for deriving total lateral diffusion in MOS transistors includes deriving (40) a DC model. The DC model is then verified (42) with a multifinger transistor. The gate of the multifinger transistor is then isolated (44). Voltage pulses are then applied (46) to the multifinger transistor, and the current attributable to the voltage pulses is measured (48). Using the model, estimates of the total lateral diffusion are adjusted (50) until the modelled current matches the measured current. Finally, the complete and accurate AC/DC model can be used (52) by circuit designers to design various circuits that will operate as designed when implemented.