The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 15, 1997

Filed:

Sep. 13, 1993
Applicant:
Inventors:

Johannes Georg Bednorz, Wolfhausen, CH;

Andrei Catana, Preverenges, CH;

Jean Pierre Locquet, Kilchberg, CH;

Erich Maechler, Siebnen, CH;

Carl Alexander Mueller, Hedingen, CH;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B05D / ; C23C / ; C23C / ;
U.S. Cl.
CPC ...
505473 ; 505474 ; 505475 ; 505500 ; 505729 ; 505731 ; 505732 ; 505742 ; 427 62 ; 4272557 ; 427596 ;
Abstract

Described is a process for manufacturing thin films by periodically depositing (DEP) a number of block layers consisting of different base materials on a substrate (multilayer deposition), wherein the thickness of the layers (LT) is restricted to one to 20 monolayers and deposition as well as crystallization of the thin film is completed at approximately constant temperature without performing a separate annealing step. The method can be used to produce thin films of high-T.sub.c -superconductors. It allows a better control of the crystal growth of ternary or higher compounds with comparatively large unit cells.


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