The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 1997
Filed:
Feb. 14, 1996
Applicant:
Inventors:
Kathleen Russell, Santa Clara, CA (US);
Stuardo Robles, Sunnyvale, CA (US);
Bang C Nguyen, Fremont, CA (US);
Visweswaren Sivaramakrishnan, Cupertino, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B / ; B05C / ;
U.S. Cl.
CPC ...
4284723 ; 118 50 ; 118697 ; 1187 / ; 1187 / ; 118725 ; 118728 ; 427 97 ; 427 99 ; 427294 ; 427314 ; 427570 ; 427573 ; 427578 ; 428704 ;
Abstract
A method of and apparatus for depositing a silicon oxide layer onto a wafer or substrate is provided. The present method includes introducing into a processing chamber a process gas including silicon, oxygen, boron, phosphorus and germanium to form a germanium doped BPSG oxide layer having a reflow temperature of less than 800.degree. C. Preferred embodiments of the present method are performed in either a subatmospheric CVD or a plasma enhanced CVD processing apparatus.