The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 1997
Filed:
Nov. 13, 1995
Applicant:
Inventor:
Heinz-Peter Frerichs, St. Peter, DE;
Assignee:
Deutsche ITT Industries GmbH, Freiburg, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257530 ; 257 50 ; 257379 ; 257529 ; 365 96 ; 3652257 ;
Abstract
A programmable semiconductor memory is disclosed which can be fabricated with an MOS process of low complexity and which takes up little space. The memory comprises a MOS field-effect transistor having an antifuse region between the gate electrode and the drain region. Prior to application of a programming voltage, the antifuse region electrically isolates the gate electrode and the drain region from each other. On application of the programming voltage to the gate electrode, which is greater than the supply voltage applied between the drain and the source, the antifuse region changes to a low-impedance state.