The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 1997
Filed:
Aug. 23, 1995
Charles Russell Smith, Waterloo, CA;
Michael George Farrier, Boyne City, MI (US);
Dalsa, Inc., , CA;
Abstract
A structure for a charge coupled device (CCD) to minimize effects of masking defects of a predetermined dimensional extent includes a plurality of sets of conductors, a plurality of strapping networks and a connection matrix of via contacts. Each set of the plurality of sets of conductors includes a plurality of parallel elongate first conductors oriented in a first direction and disposed substantially in a first plane, each first conductor being comprised of a first material and characterized by a first sheet resistance per square of conductor. Each network of the plurality of strapping networks includes a plurality of parallel elongate second conductors oriented in a second direction transverse to the first direction and being disposed substantially in a second plane insulatively spaced apart from the first plane, each second conductor being comprised of a second material and characterized by a second sheet resistance per square of conductor, the second sheet resistance being less than the first sheet resistance. Each via contact of the connection matrix of via contacts connects a conductor of the plurality of first conductors of one of the sets of conductors with a conductor of the plurality of second conductors of one of the strapping networks, the connection matrix having a first via contact. Distances between the first via contact and each other via contact of the connection matrix are greater than the predetermined dimensional extent while a first lateral spacing between adjacent conductors of the plurality of first conductors is less than the predetermined dimensional extent, and while a second lateral spacing between adjacent conductors of the plurality of second conductors is less than the predetermined dimensional extent.