The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 1997
Filed:
Apr. 07, 1995
James O McCaldin, San Diego, CA (US);
Michael W Wang, Pasadena, CA (US);
Thomas C McGill, Pasadena, CA (US);
California Institute of Technology, Pasadena, CA (US);
Abstract
n-type wide bandgap semiconductors grown on a p-type layer to form hole injection pn heterojunctions and methods of fabricating the same. In a preferred embodiment, a p-type gallium nitride substrate is used. A first layer, such as a magnesium zinc sulfide layer Mg.sub.x Zn.sub.1-x S is then deposited. Thereafter, a second layer such as an n-type zinc sulfide layer is deposited. The magnesium zinc sulfide layer forms an electron blocker layer, and preferably is adequately thick to prevent significant tunneling of electrons there through. Thus, the primary charge flow across the heterojunction is by way of holes injected into the n-type zinc sulfide region from the p-type gallium nitride region, resulting in electron-hole recombination in the zinc sulfide region to provide light emission in the wide bandgap zinc sulfide material. Alternate embodiments are disclosed.