The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 1997
Filed:
Dec. 20, 1995
Dominic Joseph Schepis, Wappingers Falls, NY (US);
Joseph Francis Shepard, Hopewell Junction, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of gettering an SOI wafer from the front side of the wafer includes depositing a gettering layer, such as polysilicon, on the SOI layer and annealing the SOI wafer with the gettering layer in place. A polish stop structure, which can be deposited before or after the gettering layer, provides a means for selectively removing the gettering layer from the SOI wafer without damaging the surface or eroding the thickness of the SOI layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile