The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 1997
Filed:
May. 12, 1994
Kyung-seob Kim, Seoul, KR;
Chi-woo Kim, Seoul, KR;
Young-chan Kweon, Seoul, KR;
Won-kie Chang, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
A liquid crystal display having a gate insulating film of whose dielectric constant is a high and exhibits excellent leakage characteristics, includes a plurality of gate wirings formed on the transparent substrate, a plurality of signal lines arrayed to intersect the plurality of gate wirings, a plurality of switching devices located at the point of intersection between the respective gate wirings and signal lines. The switching device comprises a gate electrode constituted by aluminum or an aluminum alloy and a gate insulating film inserted between the channels of switching devices and the gate electrode. The gate insulating film has a first anodic oxide film constituted by aluminum or an aluminum alloy and a second anodic oxide film constituted by tantalum or a tantalum alloy. In the manufacturing method thereof, metals, aluminum or tantalum, are simultaneously anodically oxidized so as to suppress a hillock. An insulating layer having a high dielectric constant can be easily obtained while a leakage current characteristic is strengthened and its breakdown voltage is improved. A glass substrate can be protected since second and third anodic oxide films (Ta.sub.2 O.sub.5) are formed on the entire surface of the substrate.