The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 1997
Filed:
Oct. 13, 1995
Applicant:
Inventor:
Yung-Tsun Lo, Hsin-Chu, TW;
Assignee:
Mosel Vitelic, Inc., , TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
427250 ; 427251 ; 427253 ; 4272555 ; 4272557 ;
Abstract
A two-step nucleation W-CVD process has been developed to suppress volcano formation which usually appears at W/TiN boundary. The process using different combination of spacing of W-CVD chamber between the shower head and heater and chamber pressure has been used to form an uniform nucleation layer (with uniformity of 5-6%). An uniform nucleation layer can prevent WF.sub.6 penetration during W-bulk deposition. Moreover, the reaction between WF.sub.6 and Ti can be suppressed. The formation of volcano at the clamp area around the wafer edge can be effectively reduced.