The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 1997
Filed:
Dec. 18, 1995
Hiroyuki Miwa, Kanagawa, JP;
Hiroaki Anmo, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A method for producing a semiconductor device which decrease the number of processes at the time of producing BiCMOSLSI than the usual. Impurities are introduced into a semiconductor substrate under a second insulating film and a first electric conductive film utilizing a first insulating film and the first conductive film formed on the semiconductor substrate as masks. Therefore, it is able to perform concurrent introduction of impurities into the gate electrode, the source and the drain of the MOSFET, the base electrode of the bipolar transistor, the emitter and the collector contact of the lateral bipolar transistor, the outlet electrode of the capacitor, and the resistor, so that the number of process steps can be reduced.