The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 1997
Filed:
Nov. 14, 1994
Applicant:
Inventor:
Shozo Nishimoto, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F / ;
U.S. Cl.
CPC ...
430313 ; 430311 ; 430396 ; 438948 ;
Abstract
In a method for manufacturing a semiconductor device, layer including a first portion having a first height and a second portion having a second height different from the first height is formed on a substrate. Then, an image formation beam is irradiated onto the layer to form first and second patterns on the first and second portions, respectively. A minimum feature size of the first pattern is different from that of the second pattern.