The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 1997
Filed:
Jun. 08, 1995
Kenneth Vaccaro, Acton, MA (US);
Eric A Martin, Medford, MA (US);
Stephen M Spaziani, Nashua, NH (US);
Andrew Davis, Boston, MA (US);
Abstract
An InP buffer layer is first formed upon an InP substrate; a thin layer of heavily doped InGaAs, a thick layer of light absorbing InGaAs, and a thin layer of InAlAs are thereafter sequentially grown upon the InP buffer layer. A light reflective Schottky barrier metallic layer is then applied to the InAlAs layer and the resulting device is inverted and affixed to a newly provided substrate, to thus shield and protect the sensitive Schottky contact. The InP substrate layers are thereafter removed and the now exposed thin, heavily doped InGaAs layer is coated with a transparent, electrically conductive layer of Indium-tin-oxide.