The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 1997
Filed:
Feb. 01, 1995
Kazuhisa Sakamoto, Kyoto, JP;
Rohm Co., Ltd., Kyoto, JP;
Abstract
A transistor includes (a) a first semiconductor layer formed by a semiconductor substrate; (b) a second semiconductor layer formed on the first semiconductor layer and having an impurity of the same conductivity type as the first layer in a concentration lower than that of the first semiconductor layer; and (c) a third semiconductor layer formed on the second semiconductor layer having an impurity of the same conductivity type as the first semiconductor layer in a concentration lower than that of the second semiconductor layer. A base region is formed in the third layer and an emitter region is formed in the base region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile