The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 1997
Filed:
Jun. 10, 1996
Applicant:
Inventors:
James M Gaines, Mohegan Lake, NY (US);
John Petruzzello, Carmel, NY (US);
Assignee:
U.S. Philips Corporation, New York, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; C30B / ;
U.S. Cl.
CPC ...
114105 ; 117956 ; 117108 ; 438 47 ;
Abstract
Epitaxial layers of II-VI semiconductor compounds having low incidence of lattice defects such as stacking faults are produced by first depositing a fraction of a monolayer of the cation species of the compound, followed by depositing a thin layer of the compound by migration enhanced epitaxy (MEE). Growth of the remainder of the layer by MBE results in much lower defects than if the entire layer had been grown by MBE. Layers are useful in devices such as LEDs and injection lasers.