The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 1997
Filed:
Jun. 03, 1996
Masakatsu Hoshi, Yokohama, JP;
Teruyoshi Mihara, Yokosuka, JP;
Nissan Motor Co., Ltd., Yokohama, JP;
Abstract
A lateral double-diffused MOSFET has a semiconductor substrate, a drain region formed on the substrate, a gate insulation film formed on the drain region, a gate electrode formed on the gate insulation film, source and drain openings formed through the gate electrode, a first conductive region formed under the drain region, a source electrode formed on the source openings, a drain electrode formed on the drain openings, and second conductive regions for connecting the drain electrode to the first conductive region. The source and drain openings are cyclically arranged so that at least two rows of source openings are arranged between adjacent drain openings, to reduce the ON resistance of the MOSFET.