The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 1997
Filed:
Jan. 09, 1995
Applicant:
Inventors:
Kenneth L Davis, Tempe, AZ (US);
Charles E Weitzel, Mesa, AZ (US);
Assignee:
Motorola, Schaumburg, IL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257 77 ; 257330 ; 257339 ; 257342 ;
Abstract
A silicon carbide LOCOS vertical MOSFET formed on a silicon carbide substrate with portions of epitaxial layers defining the various transistor regions, rather than defining the regions with implants and diffusion. Because of the low diffusion rate in silicon carbide, the LOCOS operation can be performed after the doped epitaxial layers are formed.
Davis, Kenneth. (1997). Silicon carbide locos vertical mosfet device (U.S. Patent No. 5635732). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5635732
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile