The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 1997
Filed:
Jul. 12, 1995
Stanley E Swirhun, Boulder, CO (US);
Honeywell Inc., Minneapolis, MN (US);
Abstract
A HIGFET having a gate pad situated over a non conducting portion of the channel layer of the heterostructure wafer. The method of producing this device involves application of a very thin layer of gate metal on the wafer to protect the wafer surface during further processing. A photoresist coating is formed over the active area of the channel layer of the FET. An ion isolation implantation is applied to the wafer resulting in a non conducting portion of the channel layer that is not covered by the photoresist layer. The photoresist layer is removed and a thick layer of gate metal is applied on the thin layer of gate metal. The gate layers are fashioned into a pad over the non conducting portion of the channel layer and at least one finger over the conducting portion of the channel layer, resulting in the gate having minimized parasitic gate capacitance.