The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 1997
Filed:
Jul. 07, 1995
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
A method for manufacturing a capacitor of a semiconductor memory device is provided. A first insulating layer and a second insulating layer are formed in sequence on a semiconductor substrate on which a transistor including a source region, a drain region and a gate electrode, and a buried bit-line surrounded by insulating layer are formed. Then, a contact hole is formed by sequentially etching the layers stacked on the source region, by which the source region of the transistor is exposed, and a spacer made of an insulating substance is formed inside the contact hole, and a first conductive layer is formed on the whole surface of the resultant. Next, the first conductive layer and second insulating layer are etched, and a second conductive layer is formed on the whole surface of the resultant, and a storage electrode is formed by etching the second conductive layer using the first conductive layer as a mask. According to the method, the step for forming the contact hole is very simple and less photolithography steps are required since the first conductive layer is used as a mask for etching the second conductive layer, thereby simplifying the manufacturing process.