The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 20, 1997

Filed:

Oct. 07, 1996
Applicant:
Inventors:

Ming-Horn Tsai, Hsinchu, TW;

Bin Liu, Taipei, TW;

Shih-Yin Lan, Hsin-Chu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G03F / ;
U.S. Cl.
CPC ...
430 22 ; 430394 ; 430312 ;
Abstract

A method for photo-exposing a blanket conformal photosensitive layer upon a high step height topography substrate layer. There is first provided a high step height topography substrate layer having a blanket conformal photosensitive layer formed thereupon. The high step height topography substrate layer has a first region having a first step height separated from a third region having a third step height by a second region having a second step height. The second step height is intermediate to the first step height and the third step height. The blanket conformal photosensitive layer is photo-exposed to form a first pattern upon the first region and the second region through use of a first reticle and a first photo-exposure condition. The first photo-exposure condition provides a first depth of focus suitable for at least the first region. In a separate process step, the blanket conformal photosensitive layer is photo-exposed to form a second pattern upon the second region and the third region through use of a second reticle and a second photo-exposure condition. The second photo-exposure condition provides a second depth of focus suitable for at least the third region. The first pattern upon the second region and the second pattern upon the second region overlap.


Find Patent Forward Citations

Loading…