The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 1997
Filed:
Jun. 05, 1995
Toshiya Takahara, Yokohama, JP;
Akio Kondo, Konan, JP;
Tosoh Corporation, , JP;
Abstract
An ITO sputtering target comprised of indium oxide and tin oxide and having a density of at least 6.4 g/cm.sup.3, wherein the center line average height (R.sub.a) of the surface to be sputtered is not larger than 0.8 .mu.m, and at least one property selected from the following (i), (ii) and (iii) is satisfied: (i) the maximum height (R.sub.max) is not larger than 7.0 .mu.m, (ii) the ten point average height (R.sub.z) is not larger than 6.0 .mu.m, and (iii) the maximum height (R.sub.t) of said surface as expressed by the distance between two lines which are parallel to the center line of a surface roughness curve drawn as measured at a sample length of 2.5 mm, and which sandwich said surface roughness curve, is not larger than 6.5 .mu.m. Preferably, R.sub.a and the or each property (R.sub.max, R.sub.z or R.sub.t) selected from (i), (ii) and (iii) satisfy the formula: R.sub.a .times.(R.sub.max, R.sub.z or R.sub.t).ltoreq.3.0 .mu.m.sup.2.