The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 1997
Filed:
Apr. 25, 1995
Steven H Voldman, Burlington, VT (US);
Minh H Tong, Essex, VT (US);
Edward J Nowak, Essex Junction, VT (US);
Stephen F Geissler, Underhill, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
The invention comprises a diode in a well having trench isolation that has an edge. Both the well contact of the diode and the rectifying contact of the diode are silicided, but the silicide on the rectifying contact is spaced from the trench isolation edge. The spacing is provided by a gate stack or other mask. In one embodiment, the gate stack alone spaces the two diode contacts from each other, eliminating the need for trench isolation therebetween. The structure reduces diode series resistance and silicide junction penetration. It significantly improves heat flow in trench isolation technologies, increasing the level of ESD protection. The invention also comprises an SOI diode having a lightly doped region in the thin layer of semiconductor under a gate stack with an ohmic contact to the lightly doped region self-aligned to an edge of the gate stack.