The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 1997
Filed:
Nov. 30, 1994
Applicant:
Inventors:
Tetsu Nagamatsu, Kawasaki, JP;
Hiroshi Momose, Tokyo, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257205 ; 257378 ;
Abstract
A semiconductor device has a plurality of basic cells fabricated on a single semiconductor substrate. Each of the basic cells comprises a first-conduction-type FETs, a second-conduction-type FETs, and a bipolar transistor. The collector region of the bipolar transistor is formed in a well region where the first-conduction-type FETs are formed. The bipolar transistor is formed between the first-conduction-type FETs of adjacent ones of the basic cells separated by an element insulation film.