The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 1997
Filed:
Feb. 12, 1996
Applicant:
Inventors:
Chi-Sung Chang, Tempe, AZ (US);
Judith L Sutor, Chandler, AZ (US);
Assignee:
Motorola, Inc., Schaumburg, IL (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257335 ; 257336 ; 257337 ; 257338 ; 257493 ;
Abstract
An object of the present invention is to provide an LD-MOS transistor with a reduced device real estate and high breakdown strength. An extended drain region doped with phosphorus is formed in contact with an underside of an insulation layer and a drain diffusion region, respectively. The insulation layer is deposited over a conductive gate layer and a drain diffusion region, respectively.