The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 1997
Filed:
Aug. 28, 1995
Applicant:
Inventors:
Mohit Bhatnagar, Mesa, AZ (US);
Charles E Weitzel, Mesa, AZ (US);
Assignee:
Motorola, Inc., Schaumburg, IL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257 77 ; 257285 ; 257409 ; 257489 ;
Abstract
A lateral silicon carbide transistor (10) utilizes a modulated channel region (18) to form an accumulation region that facilitates a low on-resistance. A doped region of the channel layer forms a channel insert (14) that also lowers the on-resistance of the transistor (10). Field plates (23,24) are utilized to facilitate providing a high breakdown voltage. A high resistance layer (29)between the field plates (23,24) also assists in increasing the breakdown voltage and decreasing on-resistance of the transistor (10).