The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 1997
Filed:
Jan. 31, 1995
Applicant:
Inventor:
Yukinori Ochiai, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C / ; H05H / ; H05H / ;
U.S. Cl.
CPC ...
427533 ; 427527 ; 427535 ; 427563 ; 427578 ;
Abstract
For forming a photoluminescence layer on a semiconductor layer, ions are irradiated to a surface portion of a semiconductor layer where a photoluminescence layer is to be formed, and then, the semiconductor layer is immersed in a solution containing hydrofluoric acid, whereby the ion-irradiated and hydrofluoric-acid-treated portion forms a photoluminescence layer.
Ochiai, Yukinori. (1997). Method for forming photoluminescence layer on a semiconductor layer by (U.S. Patent No. 5626921). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5626921
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile