The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 06, 1997

Filed:

May. 30, 1995
Applicant:
Inventors:

Satoshi Iio, Komaki, JP;

Masakazu Watanabe, Komaki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C / ; B05D / ;
U.S. Cl.
CPC ...
427249 ; 427255 ; 4272551 ; 4272557 ; 427575 ; 427577 ;
Abstract

Method for coating a substrate formed of a sintered silicon nitride based material with a film of diamond by a gas phase synthesis technique including a first step of applying a film having a thickness of 0.5 to 2.0 .mu.m at a temperature not higher than a temperature at which grain boundary components of the substrate volatilize, and a second step of synthesizing the film of diamond-and-the-like to a thickness of 5 to 100 .mu.at a temperature which expedites synthesis of the film of diamond.


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Iio, Satoshi. (1997). Method for producing silicon nitride based member coated with film of (U.S. Patent No. 5626908). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5626908

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