The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 1997
Filed:
Jul. 01, 1996
Applicant:
Inventor:
Bernard D Miller, San Jose, CA (US);
Assignee:
Micrel, Inc., San Jose, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257387 ; 257346 ; 257401 ;
Abstract
A self-aligned MOS transistor is described in which the gate-drain underdiffusion length is substantially greater than the gate-source underdiffusion length, resulting in a relatively high gate-drain capacitance. This is accomplished by driving in the drain dopants to have a greater diffusion depth and underdiffusion length than that of the source dopants. The increased gate-drain capacitance obviates the need to provide a separate gate-drain capacitor where increased gate-drain capacitance is desired.
Miller, Bernard. (1997). Mos transistor having increased gate-drain capacitance (U.S. Patent No. 5625216). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5625216
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile