The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 1997
Filed:
Jun. 03, 1996
Applicant:
Inventors:
S Chandrasekhar, Matawan, NJ (US);
Andrew G Dentai, Atlantic Highlands, NJ (US);
Yasuyuki Miyamoto, Nagareyama, JP;
Assignee:
Lucent Technologies Inc., Murray Hill, NJ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257198 ; 257197 ; 257623 ; 257626 ; 257586 ; 257593 ;
Abstract
The total base-collector capacitance of a double-heterostructure bipolar transistor device is reduced by removing semiconductor material from the extrinsic regions and replacing the removed material with a relatively-low-dielectric-constant material, The base-collector capacitance is further reduced by using a composite subcollector structure that permits the extrinsic regions to be made thicker than the intrinsic region of the device.
Chandrasekhar, S. (1997). High-speed double-heterostructure bipolar transistor devices (U.S. Patent No. 5625206). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5625206
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile