The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 1997
Filed:
Sep. 24, 1996
Applicant:
Inventor:
Noboru Kusama, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257197 ; 257200 ; 257586 ; 330285 ; 330300 ;
Abstract
In an NPN type bipolar transistor, by employing AlGaAs or InGaAs having greater band gap than silicon, for an emitter and a base, doping amount of the emitter can be made smaller than that of the base to permit improvement of reverse withstanding voltage between the base and the emitter. Therefore, B class or C class bias can be used in a microwave band to improve efficiency.