The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 1997
Filed:
Jun. 08, 1995
Bruce H Chai, Oviedo, FL (US);
University of Central Florida, Orlando, FL (US);
Abstract
Semiconductor light emitting and sensing devices are comprised of a lattice matching wurtzite structure oxide substrate and a III-V nitride compound semiconductor single crystal film epitaxially grown on the substrate. Single crystals of these oxides are grown and the substrates are produced. The lattice matching substrates include Lithium Aluminum Oxide (LiAlO.sub.2), Lithium Gallium Oxide (LiGaO.sub.2), Lithium Silicon Oxide (Li.sub.2 SiO.sub.3), Lithium Germanium Oxide (Li.sub.2 GeO.sub.3), Sodium Aluminum Oxide (NaAlO.sub.2), Sodium Gallium Oxide (NaGaO.sub.2), Sodium Germanium Oxide (Na.sub.2 GeO.sub.3), Sodium Silicon Oxide (Na.sub.2 SiO.sub.3), Lithium Phosphor Oxide (Li.sub.3 PO.sub.4), Lithium Arsenic Oxide (Li.sub.3 AsO.sub.4), Lithium Vanadium Oxide (Li.sub.3 VO.sub.4), Lithium Magnesium Germanium Oxide (Li.sub.2 MgGeO.sub.4), Lithium Zinc Germanium Oxide (Li.sub.2 ZnGeO.sub.4), Lithium Cadmium Germanium Oxide (Li.sub.2 CdGeO.sub.4), Lithium Magnesium Silicon Oxide (Li.sub.2 MgSiO.sub.4), Lithium Zinc Silicon Oxide (Li.sub.2 ZnSiO.sub.4), Lithium Cadmium Silicon Oxide (Li.sub.2 CdSiO.sub.4), Sodium Magnesium Germanium Oxide (Na.sub.2 MgGeO.sub.4), Sodium Zinc Germanium Oxide (Na.sub.2 ZnGeO.sub.4) and Sodium Zinc Silicon Oxide (Na.sub.2 ZnSiO.sub.4). These substrates are used to grow single crystal epitaxial films of III-V nitride compound semiconductors with the composition Al.sub.x In.sub.y Ga.sub.1-x-y N 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, and 0.ltoreq.x+y.ltoreq.1. The semiconductor light devices can also include mixed combinations of any two or more of the above listed compounds. Furthermore, the preferred lattice matching substrates can include all the above listed modified wurtzite structure oxide compounds and their mixed crystals with substitution of the following elements, Be, B, N, Cr, Mn, Fe, Co, Ni, Cu, In and Sb. With the exception of N which can partially replaces oxygen only, all the rest elements are able to replace partially the cations of the above mentioned wurtzite structure oxide compounds. The types of semiconductor light devices that use this invention include light emitting devices, laser diodes, optical pumped laser diodes and optical detectors such as photoluminescence sensors and photo detectors. The laser diode devices can include a lateral or vertical Fabry-Perot resonant cavity, with or without metal electrodes.