The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 1997
Filed:
Dec. 14, 1995
Applicant:
Inventors:
Kuo-Hua Lee, Wescosville, PA (US);
Chun-Ting Liu, Berkeley Heights, NJ (US);
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257 69 ; 257350 ; 257377 ; 257383 ; 257384 ; 257393 ; 257903 ; 257904 ;
Abstract
A complementary device consisting of a PMOS TFT transistor and an NMOS FET transistor uses a conducting layer to shunt drain regions of the transistors to eliminate any detrimental diode or p-n junction effects. The use of the conducting layer significantly improves the current drive capabilities of the PMOS TFT when the complementary device is used to design SRAM cells with NMOS pull-down transistors.