The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 1997
Filed:
Jun. 13, 1996
Applicant:
Inventors:
Xiao-Ming Li, Ottawa, CA;
Sorin P Voinigescu, Kanata, CA;
Assignee:
Northern Telecom Limited, Montreal, CA;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438339 ; 438366 ; 438204 ;
Abstract
A lateral bipolar transistor comprising a self-aligned polysilicon base contact, and polysilicon emitter and collector contacts is provided. The self-aligned base contact significantly reduces the base width and therefore the base resistance compared with conventional lateral bipolar transistors, thus improving f.sub.t and f.sub.max. The polysilicon emitter and collector contacts improve the emitter efficiency and current gain, and allows for more flexible contact placement. The process is compatible with conventional double-poly bipolar processes.