The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 1997
Filed:
Mar. 28, 1994
Applicant:
Inventor:
John L Cain, Schertz, TX (US);
Assignee:
VLSI Technology, Inc., San Jose, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438715 ; 216 67 ; 438723 ; 438721 ;
Abstract
In a dry non-isotropic etching process, backside cooling by helium controls the rate and uniformity of etching in a thermal silicon layer, the taper of profiles etched into silicon dioxide layers, and the dimension and uniformity of etched structures in a polycide or polysilicon layer, on the surface of a silicon wafer. Helium pressures from greater than 2 torr to more than 10 torr are satisfactorily utilized to produce these effects.
Quick Actions:
Cain, John. (1997). Optimization of dry etching through the control of helium backside (U.S. Patent No. 5624582). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5624582
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile