The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 1997
Filed:
Sep. 28, 1995
Taeko I Urano, Kawasaki, JP;
Shigeru Machida, Tokyo, JP;
Kenji Sano, Tokyo, JP;
Hiroshi Yoshida, Tokyo, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A liquid crystal device evaluation method including the steps of irradiating infrared a liquid crystal device with light while applying an electric field to the liquid crystal device, and obtaining a field response curve corresponding to a change in infrared light intensity with time by measuring time-profile of infrared light intensity having passed through the liquid crystal layer, wherein an impurity mixed in the liquid crystal device is detected on the basis of the slope of the field response curve which is obtained, when pulsed electric fields having different polarities are applied to the liquid crystal device, within a time corresponding to the pulse width of each pulsed electric field. An apparatus for realizing the evaluation method is also disclosed.