The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 15, 1997

Filed:

Dec. 23, 1994
Applicant:
Inventors:

Noboru Baba, Hitachioota, JP;

Hisanori Okamura, Tokai-mura, JP;

Masahiko Sakamoto, Hitachi, JP;

Hirosi Akiyama, Hitachi, JP;

Ryuichi Saito, Hitachi, JP;

Yoshihiko Koike, Hitachi, JP;

Makoto Kitano, Tsuchiura, JP;

Sigeki Sekine, Hitachi, JP;

Hideya Kokubun, Takahagi, JP;

Nobuya Koike, Maebashi, JP;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H05K / ;
U.S. Cl.
CPC ...
257712 ; 257713 ; 257717 ; 351688 ; 351704 ; 351707 ; 351711 ;
Abstract

A high reliability electric power control semiconductor device with a prolonged product lifetime has been provided by successfully suppressing the metal support plate or the metal heat dissipation plate from warping due to the thermal stress during bonding so as to prevent the occurrences of cracks and gaps in the brazing fillers in the bonded layers between the metal heat dissipation plate or the metal support plate and the insulation plate in the semiconductor device comprising the semiconductor elements, metal heat dissipation plate, thermal stress buffer, insulation plate, and the metal support plate, wherein at least one of the metal heat dissipation plate and the metal support plate comprises a copper alloy of which a softening temperature at which a hot hardness of which becomes 1/2 of the hardness at the room temperature is 350.degree. C. or more. Further, in the semiconductor device fabricated by bonding the semiconductor elements via the thermal stress buffer, the heat dissipation plate and the insulation plate onto the metal support plate, the heat dissipation plate comprises a portion having a reduced thickness in the periphery thereof machined by counterboring or the like.


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