The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 1997
Filed:
Sep. 03, 1993
Applicant:
Inventors:
Assignee:
SamSung Electronics Co., Ltd., Suwon, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257389 ; 257387 ; 257408 ; 257413 ;
Abstract
A method for fabricating a gate-to-drain overlapped MOS transistor in which gate-to-drain capacitance is lower and a structure thereby. A pad oxide layer is formed over a substrate having a first conductive layer with a first pattern formed on a first gate oxide layer, and etchback process is performed until surface part and a predetermined upper parts of the both side walls of the first conductive layer is exposed. As a result, a second conductive layers with a second pattern is formed and a second gate oxide layer thicker than the first gate oxide layer is formed.