The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 1997
Filed:
Jul. 18, 1995
Applicant:
Inventor:
Abhay M Joshi, Plainsboro, NJ (US);
Assignee:
Discovery Semiconductors, Inc., Cranbury, NJ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257184 ; 257185 ; 257190 ; 257200 ;
Abstract
A monolithic Optoelectronic Integrated Circuit including a photodiode and a CMOS readout circuit is described in which the diode is formed by compositionally graded layers of In.sub.x Ga.sub.1-x As selectively epitaxially grown between a substrate of Si and an absorption layer of In.sub.x Ga.sub.1-x As, the areas of said layers being less than 500 .mu.m.sup.2 and wherein a readout circuit on said substrate is coupled to said diode.
Joshi, Abhay. (1997). Method and apparatus for monolithic optoelectronic integrated circuit (U.S. Patent No. 5621227). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5621227
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile