The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 1997
Filed:
Apr. 26, 1994
Applicant:
Inventor:
Hideo Kobayashi, Hitachi, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257140 ; 257133 ; 257146 ; 257147 ; 257168 ; 257172 ;
Abstract
In a complex semiconductor device, an IGBT and a thyristor are formed in an identical semiconductor substrate to be connected in parallel with each other between main electrodes such that an end of the thyristor on the cathode side is connected to the main electrode via an insulated gate electrode of the IGBT. Thanks to the complex of the IGBT and the thyristor, there is attained a semiconductor device having a satisfactory ignition characteristic, a low on-state voltage, and a high breakdown voltage.