The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 1997
Filed:
Jul. 18, 1995
Hiroshi Itoh, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A field oxide film 12, an n.sup.+ -type dispersion layer 13, and an interlayer insulating film 14 are formed on a p-type semiconductor substrate, and a contact hole is formed therein. A titanium film 15 is deposited on the surface formed thus far, and arsenic is ion-implanted into a contact region through the titanium film, forming a phosphorus-dispersed layer. The substrate is heat-treated to activate the impurity in the phosphorus-dispersed layer 16 and to cause titanium and silicon to react with each other, thereby forming a titanium silicide film 17 in the contact region. A metal film is then deposited and patterned into a metal wiring 18 without removing a silicon nitride film 15a which has been produced from the titanium film.