The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 1997
Filed:
Dec. 28, 1994
Applicant:
Inventor:
Sang H Park, Kyoungki-do, KR;
Assignee:
Hyundai Electronics Industries Co., Ltd., Kyoungki-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
438297 ; 438298 ; 438303 ; 438307 ; 438291 ;
Abstract
A method for fabricating a metal oxide semiconductor field effect transistor, capable of achieving a reduction in topology by forming a trench on a silicon substrate by use of a temporary field oxide film and forming a gate electrode in the trench and capable of eliminating occurrence of a spiking phenomenon due to a metal wiring being in direct contact with the silicon substrate by forming a silicide film on a source and a drain, and capable of obtaining an increased contact margin of the metal wiring by overlapping the silicide film with a field oxide film formed on the silicon substrate.