The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 15, 1997

Filed:

Mar. 04, 1996
Applicant:
Inventors:

Bahram Jalali-Farahani, Los Angeles, CA (US);

Clifford A King, New York, NY (US);

Assignee:

Lucent Technologies Inc., Murray Hill, NJ (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438320 ; 257200 ; 438489 ; 438532 ; 438555 ;
Abstract

A heterojunction bipolar transistor in an integrated circuit has intrinsic and extrinsic base portions. The intrinsic base portion substantially comprises epitaxial silicon-germanium alloy. The extrinsic base portion substantially comprises polycrystalline material, and contains a distribution of ion-implanted impurities. An emitter overlies the intrinsic base portion, and a spacer at least partially overlies the emitter. The spacer overhangs the extrinsic base portion by at least a distance characteristic of lateral straggle of the ion-implanted impurities.


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