The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 1997
Filed:
Sep. 05, 1995
Yoichi Sasai, Hirakata, JP;
Nobuyuki Uemura, Takatsuki, JP;
Satoshi Kamiyama, Sanda, JP;
Minoru Kubo, Nabari, JP;
Takashi Nishikawa, Osaka, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A semiconductor laser of this invention includes: a semiconductor substrate; a first cladding layer made of first conductivity type ZnMgSSe, which is held by the semiconductor substrate and lattice-matches with the semiconductor substrate; a stripe-shaped second cladding layer made of second conductivity type ZnMgSSe lattice-matching with the semiconductor substrate; a light-emitting layer including a first and a second light guiding layers made of Zn.sub.1-x Mg.sub.x S.sub.1-y Se.sub.y (0.ltoreq.x<1, 0.ltoreq.y<1) and a quantum well layer made of Zn.sub.1-z Cd.sub.z Se (0.ltoreq.z<1) which is interposed between the first and the second light guiding layers, the light-emitting layer being interposed between the first and the second cladding layers; and a burying layer which is made of ZnMgSSe lattice-matching with the semiconductor substrate and formed on sides of the second cladding layer.