Method for manufacturing a capacitor of semiconductor device having

Abstract

A capacitor of a semiconductor device employing a material having a high dielectric constant or ferroelectric properties and a method for manufacturing the same are provided. The capacitor includes a plug film formed on a semiconductor substrate where a transistor having a gate electrode, a source region and a drain region is formed. An insulation film having a contact hole is formed on the plug film and a first diffusion-blocking film is formed on the plug film in the contact hole. A second diffusion-blocking film is then formed on the surface of the first diffusion-blocking film, the surface of the insulating film and on the sidewalls of the contact hole. A third diffusion-blocking film is formed on the second diffusion-blocking film and a first conductive layer is formed on the third diffusion-blocking film so as to be used for a storage electrode. A dielectric layer is formed on the first conductive layer, and a second conductive layer is formed on the dielectric layer to be used as a plate electrode. An iridium film or a ruthenium film is employed as a diffusion-blocking film that has a high conductivity and prevents silicon diffusion, to thereby obtain a larger electrostatic capacity in a small effective area and enable higher integration of a semiconductor memory device and enhance product reliability.